A50L-0001-0212 6MBI100FA-060 Fuji Electric IGBT Module

FANUC Transistor module A50L-0001-0212 for sale as brand new in box. FUJI ELECTRIC IGBT Module 6MBI100FA-060 ready to replace your defectives IGBT modules on your FANUC Servo drives, Fanuc Spindles drives or other electric system (Inverter for motor drive, AC - DC Servo drive amplifier, Uninterruptible power supply, Industrial Machines such as Welding Machines). All of the FANUC A50L-0001-0212 Transistors modules comes new and tested.

Caracteristics of this FUJI Electric IGBT Module 6MBI100FA-060 : 100A, 600 Volts IGBT Series. (PDF - A50L-0001-0212 6MBI100FA-060)

An IGBT 6MBI100FA-060 cell is constructed similarly to a n-channel vertical construction power MOSFET except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor. This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET. This connection results in a significantly lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices. As the blocking voltage rating of both MOSFET and IGBT devices increases, the depth of the n- drift region must increase and the doping must decrease, resulting in roughly square relationship increase in forward conduction loss compared to blocking voltage capability of the device.