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A50L-0001-0267#N 7MBP75RA060 Fuji Electric IGBT IPM
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Buy online a FANUC Power Transistor module reference FANUC A50L-0001-0267#N for sale as brand new in box. Fanuc power block installed on Fanuc Servo drives, Fanuc Spindle drives or other Electrical system. This Fanuc transistor module is also known as FUJI ELECTRIC 7MBP75RA060. Our transistors A50L-0001-0267 are brand new, tested and always in stock.
Details of this FUJI ELECTRIC IGBT 7MBP75RA060 : 75A, 600V IPM R series. (PDF Datasheet : A50L-0001-0267 7MBPRA060 Fanuc Fuji Electric)
The IGBT A50L-0001-0267 (7MBP75RA060) is a semiconductor device with four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action. This mode of operation was first proposed by Yamagami in his Japanese patent S47-21739, which was filed in 1968. This mode of operation was first experimentally discovered by B. J. Baliga in vertical device structures with a V-groove gate region and reported in the literature in 1979. The device structure was referred to as a ‘V-groove MOSFET device with the drain region replaced by a p-type Anode Region’ in this paper and subsequently as the insulated gate rectifier (IGR) the insulated-gate transistor (IGT) the conductivity-modulated field-effect transistor (COMFET) and "bipolar-mode MOSFET".
Details of this FUJI ELECTRIC IGBT 7MBP75RA060 : 75A, 600V IPM R series. (PDF Datasheet : A50L-0001-0267 7MBPRA060 Fanuc Fuji Electric)
The IGBT A50L-0001-0267 (7MBP75RA060) is a semiconductor device with four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action. This mode of operation was first proposed by Yamagami in his Japanese patent S47-21739, which was filed in 1968. This mode of operation was first experimentally discovered by B. J. Baliga in vertical device structures with a V-groove gate region and reported in the literature in 1979. The device structure was referred to as a ‘V-groove MOSFET device with the drain region replaced by a p-type Anode Region’ in this paper and subsequently as the insulated gate rectifier (IGR) the insulated-gate transistor (IGT) the conductivity-modulated field-effect transistor (COMFET) and "bipolar-mode MOSFET".
Availability | Immediate shipment |
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Weight | 0.30 kgs |
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