A50L-0001-0302 2MBI200NR-060 Transistor Module

FANUC Transistor module A50L-0001-0302 for sale as brand new in box. FUJI ELECTRIC IGBT Module 2MBI200NR-060 ready to replace your defectives IGBT modules on your FANUC Servo drives, Fanuc Spindles drives or other electric system. All of the FANUC A50L-0001-0302 Transistors modules comes new and tested.

Caracteristics of this FUJI Electric IGBT Module 2MBI200NR-060 : 200A, 600 Volts IGBT Series. (PDF - A50L-0001-0302 2MBI200NR-060)

An IGBT 2MBI200NR-060 cell is constructed similarly to a n-channel vertical construction power MOSFET except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor. This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET. This connection results in a significantly lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices. As the blocking voltage rating of both MOSFET and IGBT devices increases, the depth of the n- drift region must increase and the doping must decrease, resulting in roughly square relationship increase in forward conduction loss compared to blocking voltage capability of the device. A50L-0001-0302