A50L-0001-0330 PM75RFE060 MITSUBISHI IGBT IPM
Starting at $277.50 $277.50
Transistor module MITSUBISHI ELECTRIC PM75RFE060 for sale. The FANUC reference is A50L-0001-0330. This transistor module is mounted on FANUC spindle drives or other electric equipments, details: IGBT IPM 75A 600v. This transistor IGBT MITSUBISHI ELECTRIC PM75RFE060 FANUC A50L-0001-0330 is ready to replace your defective part.
An IGBT cell is constructed similarly to a n-channel vertical construction power MOSFET except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor. Cross section of a typical IGBT showing internal connection of MOSFET and Bipolar DeviceThis additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET. This connection results in a significantly lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices. As the blocking voltage rating of both MOSFET and IGBT devices increases, the depth of the n- drift region must increase and the doping must decrease, resulting in roughly square relationship increase in forward conduction loss compared to blocking voltage capability of the device. MITSUBISHI ELECTRIC PM75RFE060 FANUC A50L-0001-0330
Availability | Immediate shipment |
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Weight | 0.40 kgs |
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UPS Next Day AirFind out moreUPS Next day air service, Get it within 1 business day. (USA)
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DHL ExpressFind out moreDHL Worldwide Express - 24H/48H Express delivery to 220 countries, delivered against Proof of Signature. - Tracking Number to track it on DHL network.
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UPS GroundFind out moreStandard delivery by UPS Ground (3 to 5 days, depending of your location in the US). Delivered with a proof of Signature. (USA Only)
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DHL SelectFind out moreStandard delivery by DHL Select - 48H-72H depending of your country with Proof of Signature at the delivery. (EUROPE only)