BSM25GD100D EUPEC SIEMENS-IGBT transistor module Version B

IGBT transistor module EUPEC reference BSM25GD100D (BSM25GD100D) for sale. This EUPEC IGBT transistor module are high power devices designed for use in SIEMENS servo drive. This EUPEC BSM25GD100D( BSM25GD100D) transistor module is ready to replace your defective part.

The structure is very similar to that of a vertically diffused MOSFET featuring a double diffusion of a p-type region and an n-type region. An inversion layer can be formed under the gate by applying the correct voltage to the gate contact as with a MOSFET. The main difference is the use of a p+ substrate layer for the drain. The effect is to change this into a bipolar device as this p-type region injects holes into the n-type drift region. EUPEC BSM25GD100D(BSM25GD100D)